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ISO6720 Datasheet(PDF) 25 Page - Texas Instruments

Part # ISO6720
Description  ISO672x General Purpose Basic Dual-Channel Digital Isolators with Robust EMC
PDF  49 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
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ISO6720 Datasheet(HTML) 25 Page - Texas Instruments

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8.3 Feature Description
The ISO672xB family of devices is available in two channel configurations and default output state options to
enable a variety of application uses. Table 8-1 lists the device features of the ISO672xB devices.
Table 8-1. Device Features
PART NUMBER
MAXIMUM DATA
RATE
CHANNEL DIRECTION
DEFAULT OUTPUT
STATE
PACKAGE
RATED ISOLATION(1)
ISO6720B
50 Mbps
2 Forward, 0 Reverse
High
D-8
3000 VRMS / 4242 VPK
ISO6720FB
50 Mbps
2 Forward, 0 Reverse
Low
D-8
3000 VRMS / 4242 VPK
ISO6721B
50 Mbps
1 Forward, 1 Reverse
High
D-8
3000 VRMS / 4242 VPK
ISO6721FB
50 Mbps
1 Forward, 1 Reverse
Low
D-8
3000 VRMS / 4242 VPK
ISO6721RB
50 Mbps
1 Forward, 1 Reverse
High
D-8
3000 VRMS / 4242 VPK
ISO6721RFB
50 Mbps
1 Forward, 1 Reverse
Low
D-8
3000 VRMS / 4242 VPK
(1)
See Safety-Related Certifications for detailed isolation ratings.
8.3.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 32. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO672xB
family of devices incorporates many chip-level design improvements for overall system robustness. Some of
these improvements include:
• Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
www.ti.com
ISO6720, ISO6721, ISO6721R
SLLSFJ0D – JANUARY 2020 – REVISED SEPTEMBER 2021
Copyright © 2021 Texas Instruments Incorporated
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Product Folder Links: ISO6720 ISO6721 ISO6721R



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