SPC572L64F2 datasheet(103/112 Pages) STMICROELECTRONICS

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DocID027866 Rev 5

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SPC572Lx

Revision history

111

03-Apr-2013

(cont.)

Table 13 (I/O pull-up/pull-down DC electrical characteristics):

In row |IWPU| changed to Weak pull-up current absolute value

In row |IWPU| (P) condition changed to VIN <VIH =0.69*VDD_HV_IO,

4.5 V < VDD_HV_IO <5.5 V.

In row |IWPU| (P) minimum changed to 23 µA; maximum value deleted.

In row |IWPD| (P) minimum deleted; maximum value changed to 130 µA.

In row |IWPD| (P) condition changed to VIN >VIH =0.69*VDDE, 4.5 V < VDD <5.5 V.

Deleted: |IWPU| (T) at VIN =0V, 3.0V< VDD_HV_IO <4.0 V.

Added |IWPU| (T) at VIN >VIL = 0.49*VDDE, 4.5 V < VDD <5.5 V.

Added |IWPU| (T) at VIN >VIL =1.1 V(TTL), 4.5 V < VDD <5.5 V.

Added RWPU (Weak pull-up resistance).

Deleted: |IWPD| (T) at VIN =VDD_HV_IO, 3.0 V < VDD_HV_IO <4.0 V.

Added |IWPD| (T) at VIN <VIL = 0.49*VDDE, 4.5 V < VDD <5.5 V.

Added |IWPD| (T) at VIN <VIL =0.9 V(TTL), 4.5 V < VDD <5.5 V.

Added RWPD (Weak pull-down resistance).

Table 14 (WEAK configuration output buffer electrical characteristics):

Added footnote 4.

Specification changes:

In row ROH_W condition changed to 4.5 V < VDD_HV_IO < 5.9 V, Push pull, IOH <0.5 mA.

In row ROL_W condition changed to 4.5 V < VDD_HV_IO < 5.9 V, Push pull, IOH <0.5 mA.

In row tTR_W condition CL =25pF, 4.0V<VDD_HV_IO < 5.9 V changed to CL =25pF,

4.5 V < VDD_HV_IO <5.9 V

In row tTR_W condition CL =50pF, 4.0V<VDD_HV_IO < 5.9 V changed to CL =50pF,

4.5 V < VDD_HV_IO <5.9 V

In row tTR_W condition CL = 200 pF, 4.0 V < VDD_HV_IO < 5.9 V changed to CL = 200 pF,

4.5 V < VDD_HV_IO <5.9 V

Table 15 (MEDIUM configuration output buffer electrical characteristics):

Added footnote 4.

In ROH_M condition changed to 4.5 V < VDD_HV_IO < 5.9 V, Push pull, IOH <2mA.

In ROL_M condition changed to 4.5 V < VDD_HV_IO < 5.9 V, Push pull, IOH <2mA.

In tTR_M condition changed to CL =25pF, 4.5V<VDD_HV_IO <5.9 V.

In tTR_M condition changed to CL =50pF, 4.5V<VDD_HV_IO <5.9 V.

In tTR_M condition changed to CL = 200 pF, 4.5 V < VDD_HV_IO <5.9 V.

Table 16 (STRONG configuration output buffer electrical characteristics):

Added footnote 4.

In ROH_S condition changed to 4.5 V < VDD_HV_IO < 5.9 V, Push pull, IOH <8mA.

IN ROL_S condition changed to 4.5 V < VDD_HV_IO < 5.9 V, Push pull, IOH <8mA.

In tTR_S condition changed to CL =50pF, 4.5V<VDD_HV_IO <5.9 V.

In tTR_S condition changed to CL = 200 pF, 4.5 V < VDD_HV_IO <5.9 V.

In tTR_S condition CL =50pF, 4.5V< VDD_HV_IO <5.9 V.

Table 17 (VERY STRONG configuration output buffer electrical characteristics):

Removed footnote: For specification per Electrical Physical Layer Specification 3.0.1...

Section 3.9, I/O pad current specification:

Changed Note In order to ensure ... remain below 10%. changed to ...below 50%.

Table 19 (Reset electrical characteristics)

Added footnote to row IOL_R: IOL_R applies to both PORST and ESR0...

In row IOL_R condition changed to Device under power-on reset,

3.0 V < VDD_HV_IO < 5.5 V, VOL >1.0 V.

In row IOL_R minimum for conditions Device under power-on reset,

3.0 V < VDD_HV_IO < 5.5 V, VOL >1.0 V changed to12 mA.

Table 23 (Internal RC oscillator electrical specifications):

In row tstart_T Parameter Classification changed to D (was T).

Table 55. Document revision history (continued)

Date

Revision

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