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TMS28F004ASB70CDCDL Datasheet(PDF) 44 Page - Texas Instruments |
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TMS28F004ASB70CDCDL Datasheet(HTML) 44 Page - Texas Instruments |
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44 / 80 page  TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A – JANUARY 1996 – REVISED AUGUST 1997 44 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F004AMy and TMS28F400AMy The TMS28F004AMy and the TMS28F400AMy configurations offer a 3-V or 5-V memory read with a 12-V program and erase. This configuration is intended for low 3.3-V reads and the fast programming offered with the 12-V VPP = 12 V and 5-V VCC. This configuration is offered in two different temperature ranges: 0°C to 70°C and – 40 °C to 85°C. recommended operating conditions for TMS28F004AMy and TMS28F400AMy MIN NOM MAX UNIT VCC Supply voltage During write/read/erase/erase suspend 3.3-V VCC range 3 3.3 3.6 V VCC Supply voltage During write/read/erase/erase suspend 5-V VCC range 4.5 5 5.5 V VPP Supply voltage During read only ( VPPL ) VPPL 0 6.5 V VPP Supply voltage During write/erase/erase suspend 12-V VPP range 11.4 12 12.6 V 3 3VVCC range TTL 2 VCC + 0.5 VIH High-level dc 3.3 V VCC range CMOS VCC – 0.2 VCC + 0.2 V VIH g input voltage 5VVCC range TTL 2 VCC + 0.3 V 5 V VCC range CMOS VCC – 0.2 VCC + 0.2 3 3VVCC range TTL – 0.5 0.8 VIL Low-level dc input 3.3 V VCC range CMOS VSS – 0.2 VSS + 0.2 V VIL voltage 5VVCC range TTL – 0.3 0.8 V 5 V VCC range CMOS VSS – 0.2 VSS + 0.2 VLKO VCC lock-out voltage from write/erase (see Note 7) 2 V VHH RP unlock voltage 11.4 12 13 V VPPLK VPP lock-out voltage from write/erase 0 1.5 V TA Operating free air temperature L Suffix 0 70 °C TA Operating free-air temperature E Suffix – 40 85 °C NOTE 7: Mimimum value at TA = 25°C. word/byte typical write and block-erase performance for TMS28F004AMy and TMS28F400AMy (see Notes 8 and 9) 12-V VPP RANGE PARAMETER 3.3-V VCC RANGE 5-V VCC RANGE MIN TYP MAX MIN TYP MAX Main block-erase time 1.3 1.1 14 Main block-byte program time 1.6 1.2 4.2 Main block-word program time 0.8 0.6 2.1 Parameter/ boot-block erase time 0.44 0.34 7 NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions. 9. Excludes system-level overhead (all times in seconds) |
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