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STA8089FGA Datasheet(PDF) 25 Page - STMicroelectronics

Part # STA8089FGA
Description  Automotive GPS/Galileo/GLONASS/BeiDou/QZSS receiver with embedded RF and in-package Flash
PDF  33 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STA8089FGA Datasheet(HTML) 25 Page - STMicroelectronics

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STA8089FGA
Electrical characteristics
32
4.8.2
Oscillator electrical specifications
This device contains two oscillators:
a 32.768 kHz oscillator/buffer for RTC circuit.
an OSCI oscillator/buffer in the RF Front-End
When used in oscillator mode, each oscillator requires a specific crystal, with parameters
that must be as close as possible to the following recommended values. When used in input
buffer mode, an external clock source must be applied.
32.768 kHz OSCI32 oscillator specifications
The 32.768 kHz OSCI32 oscillator is connected between RTC_XTI (oscillator amplifier
input) and RTC_XTO (oscillator amplifier output). It also requires two external capacitors of
18 pF(a), as shown on Figure 3.
OSCI32 is disabled by default and must be enabled by setting bit28-OSCI_EN of
PRCC_BACKUP_REG0 to have 32.768KHz oscillation when an XTAL pi-network is
connected to RTC_XTI/RTC_XTO pins.
The recommended oscillator specifications are shown in Table 21:
The oscillator amplifier specifications are shown in the following table:
a. Using crystal with recommended characteristics as per Table 21.
Table 21. Crystal recommended specifications
Symbol
Parameter
Min.
Typ.
Max.
Unit
FSXTAL
Crystal frequency(1)
1. Not tested in production.
32.768
kHz
LMSXTAL
Motion inductance(1)
—5
kH
CMSXTAL
Motional capacitance(1)
5.0
fF
COSXTAL
Shunt capacitance(1)
1.3
pF
ESR
Resonance resistance(1)
80
CL
External load capacitance(1)
—18
pF
Table 22. Oscillator amplifier specifications
Symbol
Parameter
Min.
Typ.
Max.
Unit
TS
Startup time(1)
1. Not tested in production.
0.3
0.6
s
DL
Drive level(1)
<0.1
μW
RLC
Required load capacitance(1)
12.5
pF
GM
Startup transconductance
22.5
33.6
μA/V



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