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STLD257N4F7AG Datasheet(PDF) 6 Page - STMicroelectronics |
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STLD257N4F7AG Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Figure 7. Capacitance variations GIPG240420181307CVR 10 4 10 3 10 2 10 1 0 10 20 30 40 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Normalized gate threshold voltage vs temperature GADG060820180915VTH 1.2 1 0.8 0.6 0.4 0.2 -75 -25 25 75 125 175 VGS(th) (norm.) Tj (°C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GADG060820180915RON 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -25 25 75 125 175 RDS(on) (norm.) VGS = 10 V ID = 60 A TJ (°C) Figure 10. Normalized V(BR)DSS vs temperature GIPG240420181302BDV 1.06 1.04 1.02 1.00 0.98 0.96 0.94 -75 -25 25 75 125 175 V(BR)DSS (norm.) ID = 1 mA Tj (°C) Figure 11. Source-drain diode forward characteristics GIPG240420181303SDF 1.0 0.9 0.8 0.7 0.6 0.5 0.4 10 30 50 70 90 VSD (V) ISD (A) Tj = -55 °C Tj = 25 °C Tj = 175 °C STLD257N4F7AG Electrical characteristics (curves) DS12565 - Rev 4 page 6/13 |
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