STLD257N4F7AG datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 40 V

µA

VGS = 0 V, VDS = 16 V, Tj = 125 °C(1)

300

μA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.0

4.0

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 60 A

0.82

1.1

mΩ

VGS = 6.5 V, ID = 60 A

3.1

4.8

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 25 V, f = 1 MHz, VGS = 0 V

5400

Coss

Output capacitance

1870

Crss

Reverse transfer capacitance

Total gate charge

VDD = 20 V, ID = 120 A,

VGS = 0 to 10 V

(see Figure 13. Test circuit for gate

charge behavior)

66.5

Qgs

Gate-source charge

33.5

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 60 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for

resistive load switching times and

Figure 17. Switching time waveform)

Rise time

td(off)

Turn-off delay time

Fall time

STLD257N4F7AG

Electrical characteristics

DS12565 - Rev 4

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