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STLD257N4F7AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STLD257N4F7AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() AM15540v4 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on) max. ID STLD257N4F7AG 40 V 1.1 mΩ 120 A • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STLD257N4F7AG Product summary Order code STLD257N4F7AG Marking 257 Package PowerFLAT™ 5x6 dual side cooling Packing Tape and reel Automotive-grade N-channel 40 V, 0.82 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DSC package STLD257N4F7AG Datasheet DS12565 - Rev 4 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
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