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STM32H7B0AB Datasheet(PDF) 104 Page - STMicroelectronics

Part # STM32H7B0AB
Description  32-bit Arm® Cortex®-M7 280 MHz MCUs, 128-Kbyte Flash memory, 1.4-Mbyte RAM, 46 com. and analog interfaces, SMPS, crypto
PDF  205 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7B0AB Datasheet(HTML) 104 Page - STMicroelectronics

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 104 / 205 page
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Speed Symbol
Parameter
conditions
Min(1) Max(1) Unit
10
Fmax(2)
Maximum frequency
C=50 pF, 2.7 V≤VDD≤3.6 V(4)
-
85
MHz
C=50 pF, 1.62 V≤VDD≤2.7 V(4)
-
35
C=30 pF, 2.7 V≤VDD≤3.6 V(4)
-
110
C=30 pF, 1.62 V≤VDD≤2.7 V(4)
-
40
C=10 pF, 2.7 V≤VDD≤3.6 V(4)
-
166
C=10 pF, 1.62 V≤VDD≤2.7 V(4)
-
100
tr/tf (3)
Output high to low level fall time and output low to
high level rise time
C=50 pF, 2.7 V≤VDD≤3.6 V(4)
-
3.8
ns
C=50 pF, 1.62 V≤VDD≤2.7 V(4)
-
6.9
C=30 pF, 2.7 V≤VDD≤3.6 V(4)
-
2.8
C=30 pF, 1.62 V≤VDD≤2.7 V(4)
-
5.2
C=10 pF, 2.7 V≤VDD≤3.6 V(4)
-
1.8
C=10 pF, 1.62 V≤VDD≤2.7 V(4)
-
3.3
11
Fmax(2)
Maximum frequency
C=50 pF, 2.7 V≤VDD≤3.6 V(4)
-
100
MHz
C=50 pF, 1.62 V≤VDD≤2.7 V(4)
-
50
C=30 pF, 2.7 V≤VDD≤3.6 V(4)
-
133
C=30 pF, 1.62 V≤VDD≤2.7 V(4)
-
66
C=10 pF, 2.7 V≤VDD≤3.6 V(4)
-
220
C=10 pF, 1.62 V≤VDD≤2.7 V(4)
-
85
tr/tf (3)
Output high to low level fall time and output low to
high level rise time
C=50 pF, 2.7 V≤VDD≤3.6 V(4)
-
3.3
ns
C=50 pF, 1.62 V≤VDD≤2.7 V(4)
-
6.6
C=30 pF, 2.7 V≤VDD≤3.6 V(4)
-
2.4
C=30 pF, 1.62 V≤VDD≤2.7 V(4)
-
4.5
C=10 pF, 2.7 V≤VDD≤3.6 V(4)
-
1.5
C=10 pF, 1.62 V≤VDD≤2.7 V(4)
-
2.7
1. Guaranteed by design.
2. The maximum frequency is defined with the following conditions: (tr+tf) ≤ 2/3 T, skew ≤ 1/20 T, 45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.
Output buffer timing characteristics (HSLV option enabled)
Table 67. Output timing characteristics (HSLV ON)
Speed Symbol
Parameter
conditions
Min(1) Max(1) Unit
00
Fmax(2)
Maximum frequency
C=50 pF, 1.62 V≤VDD≤2.7 V
-
10
MHz
C=30 pF, 1.62 V≤VDD≤2.7 V
-
10
C=10 pF, 1.62 V≤VDD≤2.7 V
-
10
tr/tf(3)
Output high to low level fall time and output low to
high level rise time
C=50 pF, 1.62 V≤VDD≤2.7 V
-
11
ns
C=30 pF, 1.62 V≤VDD≤2.7 V
-
9
C=10 pF, 1.62 V≤VDD≤2.7 V
-
6.6
STM32H7B0xB
Operating conditions
DS13196 - Rev 7
page 104/205



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