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AT45DB081E Datasheet(PDF) 74 Page - Renesas Technology Corp |
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AT45DB081E Datasheet(HTML) 74 Page - Renesas Technology Corp |
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74 / 97 page ![]() DS-AT45DB081E-028 Rev. M Page 74 8/16/22 © 2022 Renesas Electronics AT45DB081E Datasheet 19.5 Program and Erase Characteristics 1. Values are based on device characterization, not 100% tested in production. 2. Not 100% tested (value guaranteed by design and characterization). Symbol Parameter 1.7 V to 3.6 V 2.3 V to 3.6 V Units Min Typ Max Min Typ Max tEP Page Erase and Programming Time (256/264 bytes) 15 55 15 55 ms tP Page Programming Time 2 4 2 4 ms tBP Byte Programming Time 8 8 µs tPE Page Erase Time 12 50 12 50 ms tBE Block Erase Time 30 75 30 75 ms tSE Sector Erase Time .7 1.3 .7 1.3 s tCE Chip Erase Time 10 20 10 20 s tSUSP Suspend Time Program 10 20 10 20 µs Erase 2040 2040 tRES Resume Time Program 3 5 3 5 µs Erase 3 5 3 5 tOTPP OTP Security Register Program Time 200 500 200 500 µs |
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