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RHFL6000L Datasheet(PDF) 10 Page - STMicroelectronics |
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RHFL6000L Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 28 page ![]() 6 Radiations 6.1 Total ionizing dose (MIL-STD-883 test method 1019) The products that are guaranteed in radiation within RHA QML-V system, fully comply with the MIL- STD-883test method 1019 specification. The RHFL6000L is being RHA QML-V qualified. It is covered by similarity with RHFL6000A tested and characterized in full compliance with the MIL-STD-883 specification, both below 10 mrad/s (low dose rate) and between 50 and 300 rad/s (high dose rate). • Testing is performed in accordance with MIL-prf-38535 and the test method 1019 of the MIL- STD-883 for total ionizing dose (TID). • ELDRS characterization is performed on RHFL6000A in qualification only on both biased and unbiased parts, on a sample of ten units from two different wafer lots.The RHFL6000L is covered by similarity. • Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification. Table 6. TID tests results Type Conditions Value Unit TID 50 rad(Si)/s high dose rate up to 300 krad 10 mrad(Si)/s low dose rate up to 300 ELDRS free up to 300 Output voltage radiation drift From 0 krad to 300 krad at 50 rad/s, MIL- STD-883J method 1019.9 < 1.1 ppm/krad Quiescent current (ON-state) From 0 krad to 300 krad at 50 rad/s, MIL- STD-883J method 1019.9 VI = 2.5 V to 12 V, IO = 5 to 30 mA, TJ = - 55 to +125 °C < 30 mA 6.2 Heavy-ions The heavy-ion trials are performed on qualification lots only. No additional test is performed. Focus was on the configuration for VO = 0.6 V but the results can be extrapolated to any VO < 1.25 V for the expected accuracy, provided that the scheme shown in Figure 7. Heavy-ion test configuration for VOUT < 1.25 V and the BOM list in Table 9 be adopted. For VO ≥ 1.25 V, the conclusions obtained on the former RHFL6000A device apply if compliant with the guidelines indicated in the AN5175 document. Table 7. Heavy-ion results summarizes the results of heavy-ion tests. Table 7. Heavy-ion results Feature Conditions Value Unit SEL/B performance LET = 120 MeV*cm2/mg VI = 12 V No latch-up/burn-out - SET performance during events LET = 120 MeV*cm2/mg; VI – VO = 2.5 V (1); IOUT ≤ 1 A: No SET above ± 3.3 % % of VO 1. For VO < 1.25 V, the SET accuracy within X % is guaranteed only for VI - VO ≤ 2.5 V. For this, VI = 1.25 + 2.5 V = 3.75 V is expected to be the max. limit of interest in the VO output range of concern. SEL and SET performances described here below are related to the circuit configuration and bias conditions shown in Figure 7. Heavy-ion test configuration for VOUT < 1.25 V and Table 8. Bias configurations and Table 9. Test configurations. RHFL6000L Radiations DS14125 - Rev 1 page 10/28 |
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