ISL3298EMRTEP

FN7607 Rev.2.00

Page 8 of 11

Oct 24, 2019

FIGURE 12. DRIVER DIFFERENTIAL SKEW vs TEMPERATURE

FIGURE 13. DRIVER SINGLE-ENDED SKEW vs TEMPERATURE

FIGURE 14. SINGLE-ENDED PROPAGATION DELAY vs

TEMPERATURE

FIGURE 15. DRIVER WAVEFORMS, HIGH TO LOW

Die Characteristics

SUBSTRATE AND TDFN THERMAL PAD POTENTIAL

(POWERED UP):

GND

TRANSISTOR COUNT:

516

PROCESS:

Si Gate BiCMOS

Typical Performance Curves V

CC = VL = 3.3V, TA = +25°C; Unless Otherwise Specified (Continued)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-55

-35

-15

5

25

45

65

85

105

125

TEMPERATURE (°C)

VL = VCC ≤ 3.3V, SKEW

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-55

-35

-15

5

25

45

65

85

105

125

TEMPERATURE (°C)

Y, VL = VCC = 3.3V, SKEW

Z, VL = VCC = 3.3V, SKEW

18

20

22

24

26

28

30

32

-55

-35

-15

5

25

45

65

85

105

125

TEMPERATURE (°C)

Y, VL = VCC, TDDLH

Z, VL = VCC, TDDLH

Z, VL = VCC = TDDHL

Y, VL = VCC = TDDHL

TIME (10ns/DIV)

RDIFF = 54Ω, CD = 50pF

1.5

3.0

0

3

DI

Y

Z

0

-3

-2

-1

0

1

2

3

Y - Z

VL = 1.35V