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ISL70100SEHF/PROTO Datasheet(PDF) 23 Page - Renesas Technology Corp |
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ISL70100SEHF/PROTO Datasheet(HTML) 23 Page - Renesas Technology Corp |
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23 / 28 page  ISL70100SEH, ISL73100SEH 6. Die Characteristics R34DS0009EU0101 Rev.1.01 Page 23 of 27 Jul.10.20 6. Die Characteristics Table 1. Die and Assembly Related Information Die Information Dimensions 2413µm x 3302µm (95 mils x 130 mils) Thickness: 483µm ± 25µm (19 mils ±1 mil) Interface Materials Glassivation Type: 15kÅ Nitrox Top Metallization Type: 30kÅ AlCu (99.5%/0.5%) Backside Finish Silicon Process PR40 Assembly Information Substrate Potential Floating Additional Information Worst Case Current Density <2 x105A/cm2 Transistor Count 560 Weight of Packaged Device 0.3916 grams Lid Characteristics Finish: Gold Potential: Tied to package Pin 6 (Lid) |
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