ISL70419SEH, ISL73419SEH

FN8653 Rev.3.00

Page 4 of 23

Nov 21, 2019

Absolute Maximum Ratings

Thermal Information

Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V

Maximum Supply Voltage (LET = 86.4MeV

•cm2/mg) . . . . . . . . . . . . . 36V

Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V

Max/Min Input current for Input Voltage >V+ or <V-. . . . . . . . . . . . . . . . ±20mA

Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . . . . . Indefinite

ESD Rating

Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV

Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 200V

Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V

Thermal Resistance (Typical)

JA(°C/W)

JC (°C/W)

14 Ld Flatpack (Notes 6, 7). . . . . . . . . . . . .

35

8

Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C

Maximum Junction Temperature (TJMAX) . . . . . . . . . . . . . . . . . . . . .+150°C

Recommended Operating Conditions

Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C

Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V (±5V) to 30V (±15V)

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product

reliability and result in failures not covered by warranty.

NOTES:

6.

JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features. See TB379.

7. For

JC, the case temperature location is the center of the package underside.

Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating

temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s (ISL70419SEH only);

or across a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 8)TYP

MAX

(Note 8)UNIT

Input Offset Voltage

VOS

10

85

µV

110

µV

Offset Voltage Drift

TCVOS

Established by characterization not

tested

0.1

1

µV/

°C

Input Bias Current

IB

-2.5

0.08

2.5

nA

TA = -55°C to +125°C

-5

5

nA

Over high and low dose radiation

-15

15

nA

Input Bias Current Temperature

Coefficient

TCIB

Established by characterization not

tested

-5

1

5

pA/°C

Input Offset Current

IOS

-2.5

0.08

2.5

nA

TA = -55°C to +125°C

-3

3

nA

Over high and low dose radiation

-10

10

nA

Input Offset Current Temperature

Coefficient

TCIOS

Established by characterization not

tested

-3

0.42

3

pA/°C

Input Voltage Range

VCM

Established by CMRR test

-13

13

V

Common-Mode Rejection Ratio

CMRR

VCM = -13V to +13V

120

145

dB

120

dB

Power Supply Rejection Ratio

PSRR

VS = ±2.25V to ±20V

120

145

dB

120

dB

Open-Loop Gain

AVOL

VO = -13V to +13V, RL = 10kΩ to ground

3,000

14,000

V/mV

Output Voltage High

VOH

RL = 10kΩ to ground

13.5

13.7

V

13.2

V

RL = 2kΩ to ground

13.3

13.55

V

13.0

V