ISL70419SEH, ISL73419SEH

FN8653 Rev.3.00

Page 7 of 23

Nov 21, 2019

TRANSIENT RESPONSE

Slew Rate, VOUT 20% to 80%

SR

AV = 11, RL = 2kΩVO = 4VP-P

0.5

V/µs

Rise Time

10% to 90% of VOUT

tr, tf,

small signal

AV = 1, VOUT = 50mVP-P,

RL = 10kΩ to VCM

130

ns

Fall Time

90% to 10% of VOUT

AV = 1, VOUT = 50mVP-P,

RL = 10kΩto VCM

130

ns

Settling Time to 0.1%

4V Step; 10% to VOUT

ts

AV = -1, VOUT = 4VP-P,

RL = 5kΩto VCM

12

µs

Settling Time to 0.01%

4V Step; 10% to VOUT

AV = -1, VOUT = 4VP-P,

RL = 5kΩto VCM

19

µs

Output Positive Overload Recovery Time

tOL

AV = -100, VIN = 0.2VP-P

RL = 2kΩto VCM

7µs

Output Negative Overload Recovery Time

AV = -100, VIN = 0.2VP-P

RL = 2kΩto VCM

5.8

µs

Positive Overshoot

OS+

AV = 1, VOUT = 10VP-P, Rf = 0Ω

RL =2kΩto VCM

15

%

Negative Overshoot

OS-

AV = 1, VOUT = 10VP-P, Rf = 0Ω

RL =2kΩto VCM

15

%

NOTE:

8. Compliance to datasheet limits is assured by one or more methods: production test, characterization, and/or design.

Electrical Specifications VS ± 5V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating

temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s (ISL70419SEH only);

or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)

PARAMETER

SYMBOL

CONDITIONS

MIN

(

Note 8)

TYP

MAX

(Note 8)UNIT