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ISL70419SEHF/PROTO Datasheet(PDF) 6 Page - Renesas Technology Corp |
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ISL70419SEHF/PROTO Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 23 page ![]() ISL70419SEH, ISL73419SEH FN8653 Rev.3.00 Page 6 of 23 Nov 21, 2019 Electrical Specifications VS ± 5V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s (ISL70419SEH only); or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. PARAMETER SYMBOL CONDITIONS MIN ( Note 8) TYP MAX (Note 8)UNIT Input Offset Voltage VOS 10 150 µV 250 µV Offset Voltage Drift TCVOS Established by characterization not tested 0.1 1 µV/ °C Input Bias Current IB -2.5 0.08 2.5 nA TA = -55°C to +125°C -5 5 nA Over high and low dose radiation -15 15 nA Input Bias Current Temperature Coefficient TCIB Established by characterization not tested -5 1 5 pA/°C Input Offset Current IOS -2.5 0.08 2.5 nA TA = -55°C to +125°C -3 3 nA Over high and low dose radiation -10 10 nA Input Offset Current Temperature Coefficient TCIOS Established by characterization not tested -3 0.42 3 pA/°C Input Voltage Range VCM Established by CMRR test -3 3 V Common-Mode Rejection Ratio CMRR VCM = -3V to +3V 120 145 dB 120 dB Power Supply Rejection Ratio PSRR VS = ±2.25V to ±5V 120 145 dB 120 dB Open-Loop Gain AVOL VO = -3.0V to +3.0V RL = 10kΩ to ground 3000 14000 V/mV Output Voltage High VOH RL = 10kΩ to ground 3.5 3.7 V 3.2 V RL = 2kΩ to ground 3.3 3.55 V 3.0 V Output Voltage Low VOL RL = 10kΩ to ground -3.7 -3.5 V -3.2 V RL = 2kΩ to ground -3.55 -3.3 V -3.0 V Supply Current/Amplifier IS 0.44 0.625 mA 0.75 mA Short-Circuit Current ISC 43 mA AC SPECIFICATIONS Gain Bandwidth Product GBWP AV = 1k, RL = 2kΩ 1.5 MHz Voltage Noise enp-p 0.1Hz to 10Hz 0.25 µVP-P Voltage Noise Density en f = 10Hz 12 nV/ Hz Voltage Noise Density en f = 100Hz 8.6 nV/ Hz Voltage Noise Density en f = 1kHz 8 nV/ Hz Voltage Noise Density en f = 10kHz 8 nV/ Hz Current Noise Density in f = 1kHz 0.1 pA/ Hz |
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