ISL70419SEH, ISL73419SEH

FN8653 Rev.3.00

Page 5 of 23

Nov 21, 2019

Output Voltage Low

VOL

RL = 10kΩ to ground

-13.7

-13.5

V

-13.2

V

RL = 2kΩ to ground

-13.55

-13.3

V

-13.0

V

Supply Current/Amplifier

IS

0.44

0.625

mA

0.75

mA

Short-Circuit Current

ISC

43

mA

Supply Voltage Range

VSUPPLY

Established by PSRR

± 2.25

± 20

V

AC SPECIFICATIONS

Gain Bandwidth Product

GBWP

AV = 1k, RL = 2kΩ

1.5

MHz

Voltage Noise VP-P

enVp-p

0.1Hz to 10Hz

0.25

µVP-P

Voltage Noise Density

en

f = 10Hz

10

nV/

Hz

Voltage Noise Density

en

f = 100Hz

8.2

nV/

Hz

Voltage Noise Density

en

f = 1kHz

8

nV/

Hz

Voltage Noise Density

en

f = 10kHz

8

nV/

Hz

Current Noise Density

in

f = 1kHz

0.1

pA/

Hz

Total Harmonic Distortion

THD + N

1kHz, G = 1, VO = 3.5VRMS, RL = 2kΩ

0.0009

%

1kHz, G = 1, VO = 3.5VRMS, RL = 10kΩ

0.0005

%

TRANSIENT RESPONSE

Slew Rate, VOUT 20% to 80%

SR

AV = 11, RL = 2kΩVO = 4VP-P

0.3

0.5

V/µs

0.2

V/µs

Rise Time

10% to 90% of VOUT

tr, tf,

small signal

AV = 1, VOUT = 50mVP-P,

RL = 10kΩto VCM

130

450

ns

625

ns

Fall Time

90% to 10% of VOUT

AV = 1, VOUT = 50mVP-P, RL = 10kΩto VCM

130

600

ns

700

ns

Settling Time to 0.1%

10V Step; 10% to VOUT

ts

AV = -1, VOUT = 10VP-P, RL = 5kΩto VCM

21

µs

Settling Time to 0.01%

10V Step; 10% to VOUT

AV = -1, VOUT = 10VP-P, RL = 5kΩto VCM

24

µs

Settling Time to 0.1%

4V Step; 10% to VOUT

AV = -1, VOUT = 4VP-P, RL = 5kΩto VCM

13

µs

Settling Time to 0.01%

4V Step; 10% to VOUT

AV = -1, VOUT = 4VP-P, RL = 5kΩto VCM

18

µs

Output Positive Overload Recovery Time

tOL

AV = -100, VIN = 0.2VP-P, RL = 2kΩto VCM

5.6

µs

Output Negative Overload Recovery Time

AV = -100, VIN = 0.2VP-P, RL = 2kΩto VCM

10.6

µs

Positive Overshoot

OS+

AV = 1, VOUT = 10VP-P, Rf = 0Ω

RL =2kΩto VCM

15

%

33

%

Negative Overshoot

OS-

AV = 1, VOUT = 10VP-P, Rf = 0Ω

RL =2kΩto VCM

15

%

33

%

Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating

temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s (ISL70419SEH only);

or across a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 8)TYP

MAX

(Note 8)UNIT