ISL71841SEH

FN8735 Rev. 7.00

Page 6 of 30

Feb 23, 2018

Switch Off Leakage with Device

Powered Off

IS(OFF) POWER OFF VIN = +25V, VEN/VA/VREF = 0V

V± = OPEN, TA = +25°C

-10

-

10

nA

TA = -55°C, +125°C

-10

-

80

nA

Post radiation

-100

-

100

nA

VIN = -25V, VEN/VA/VREF = 0V

V± = OPEN, TA = +25°C

-10

-

10

nA

TA = -55°C, +125°C

-80

-

10

nA

Post radiation

-100

-

100

nA

Switch On Leakage Current into

the Source (Overvoltage)

IS(ON) OVERVOLT

VIN = +35V, VOUT = 0V, TA = +25°C, -55°C

All unused switch inputs = GND,

V± = ±16.5V

-10

-

10

nA

TA = +125°C

-80

-

80

nA

Post radiation

-500

-

500

nA

VIN = -35V, VOUT = 0V, TA = +25°C, -55°C

All unused switch inputs = GND,

V± = ±16.5V

-10

-

10

nA

TA = +125°C

-20

-

20

nA

Post radiation

-500

-

500

nA

Switch Off Leakage Current into

the Source (Overvoltage)

IS(OFF) OVERVOLT VIN = +35V, VOUT = 0V, TA = +25°C, -55°C

All unused switch inputs = GND,

V± = ±16.5V

-10

-

10

nA

TA = +125°C

-80

-

80

nA

Post radiation

-750

-

750

nA

VIN = -35V, VOUT = 0V, TA = +25°C, -55°C

All unused switch inputs = GND,

V± = ±16.5V

-10

-

10

nA

TA = +125°C

-20

-

20

nA

Post radiation

-750

-

750

nA

Switch Off Leakage

ID(OFF)

VOUT = V+ - 5V, all inputs = V- + 5V

V± = ±16.5V, TA = +25°C, -55°C

-10

-

10

nA

TA = +125°C

0

-

120

nA

Post radiation

-80

-

80

nA

VOUT = V- + 5V, all inputs = V+ - 5V

V± = ±16.5V, TA = +25°C, -55°C

-10

-

10

nA

TA = +125°C

-120

-

0

nA

Post radiation

-80

-

80

nA

Switch Off Leakage Current into

the Drain (Overvoltage)

ID(OFF) OVERVOLT VOUT = 0V, VIN = +35V, V± = ±16.5V

All unused inputs are tied to GND

-10

-

10

nA

Post radiation

-500

-

500

nA

VOUT = 0V, VIN = -35V, V± = ±16.5V

All unused inputs are tied to GND

-10

-

10

nA

Post radiation

-500

-

500

nA

Electrical Specifications (±15V) V+ = 15V, V- = -15V, V

AH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.

Boldface limits apply across the operating temperature range,

-55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high

dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 10)TYP

MAX

(Note 10)UNIT