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ISL71841SEHF/PROTO Datasheet(PDF) 1 Page - Renesas Technology Corp |
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ISL71841SEHF/PROTO Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 30 page  FN8735 Rev. 7.00 Feb 23, 2018 DATASHEET FN8735 Rev. 7.00 Page 1 of 30 Feb 23, 2018 ISL71841SEH Radiation Hardened 30V 32-Channel Analog Multiplexer The ISL71841SEH is a radiation hardened, 32-channel high ESD protected multiplexer fabricated using the Renesas proprietary P6SOI (Silicon On Insulator) process technology to mitigate single event effects. It operates with a dual supply voltage ranging from ±10.8V to ±16.5V. It has a 5-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 32 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them. The ISL71841SEH’s low rON allows for improved signal integrity and reduced power losses. The ISL71841SEH is also designed for cold sparing, making it excellent for high reliability applications that have redundancy requirements. It is designed to provide a high impedance to the analog source in a powered off condition, making it easy to add additional backup devices without loading signal sources. The ISL71841SEH also incorporates input analog overvoltage protection, which disables the switch to protect downstream devices. The ISL71841SEH is available in a 48 Ld CQFP, 44 Ld CLCC, or die form and operates across the extended temperature range of -55°C to +125°C. A 16-channel version in a 28 Ld CDFP is also available. Refer to the ISL71840SEH datasheet for more information. For a list of differences between the ISL71841SEH and ISL71840SEH, see Table 1 on page 3. Related Literature For a full list of related documents, visit our website • ISL71841SEH product page Features •DLA SMD #5962-15220 • Fabricated using P6SOI process technology • Provides latch-up immunity • ESD protection 8kV (HBM) • Rail-to-rail operation • Overvoltage protection •Low rON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typical) • Flexible split rail operation - Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V - Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V • Adjustable logic threshold control with VREF pin • Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V • Analog overvoltage range (from ground) . . . . . . . . . . . . .±35V • Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum) • Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical) • Break-before-make switching • Grounded metal lid (internally connected) • Operating temperature range. . . . . . . . . . . .-55°C to +125°C • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . 100krad(Si) (Note 1) - SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg NOTE: 1. Product capability established by initial characterization. All subsequent lots are assurance tested to 50krad (0.01rad(Si)/s) wafer-by-wafer. FIGURE 1. TYPICAL APPLICATION FIGURE 2. rDS(ON) vs POWER SUPPLY ACROSS SWITCH INPUT COMMON-MODE VOLTAGE AT +25°C IN01 IN02 IN32 ADDRESS 5 IN03 . . . OUT ADC ISL71841SEH EN 0 100 200 300 400 500 600 -20 -15 -10 -5.0 0 5.0 10 15 20 -55°C +125°C +25°C SWITCH INPUT VOLTAGE (V) |
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