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PHN708 Datasheet(PDF) 7 Page - NXP Semiconductors |
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PHN708 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() 1998 Mar 17 7 Philips Semiconductors Product specification 7 N-channel 80 m Ω FET array enhancement mode MOS transistors PHN708 Fig.6 Gate-source voltage as a function of total gate charge; typical values. VDD = 15 V; ID = 1 A; Tamb =25 °C. handbook, halfpage 02 QG (nC) VGS (V) 46 10 0 8 6 4 2 MDA792 Fig.7 Output characteristics; typical values. Tamb =25 °C; tp =80 µs; δ =0. (1) VGS =10V. (2) VGS = 7.5 V. (3) VGS =6V. (4) VGS =5V. (5) VGS = 4.5 V. (6) VGS =4V. (7) VGS = 3.5 V. (8) VGS =3V. (9) VGS = 2.5 V. handbook, halfpage 0 (4) (5) (6) 12 16 8 4 0 24 10 8 6 MDA790 ID (A) VDS (V) (8) (9) (1) (2) (3) (7) Fig.8 Transfer characteristic; typical values. VDS = 10 V; Tamb =25 °C; tp =80 µs; δ =0. handbook, halfpage 02 ID (A) VGS (V) 46 16 12 4 0 8 MDA791 Fig.9 Capacitance as a function of drain-source voltage; typical values. VGS = 0 ; f = 1 MHz; Tj =25 °C. handbook, halfpage 0 300 400 200 100 0 510 25 20 15 MDA789 C (pF) VDS (V) Crss Ciss Coss |
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