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PHN708 Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHN708 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page ![]() 1998 Mar 17 8 Philips Semiconductors Product specification 7 N-channel 80 m Ω FET array enhancement mode MOS transistors PHN708 Fig.10 Source current as a function of source-drain diode forward voltage; typical values. tp = 300 µs; δ =0. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −65 °C. handbook, halfpage 0 (1) (2) (3) 0.4 IS (A) VSD (V) 0.8 1.2 8 6 2 0 4 MDA793 Fig.11 Drain-source on-state resistance as a function of gate-source voltage; typical values. Tamb =25 °C; tp = 300 µs; δ =0. (1) ID = 0.3 A. (2) ID = 0.75 A. (3) ID = 1.5 A. (4) ID = 3.1 A. (5) ID =5A. (6) ID = 7.5 A. (7) ID =10A. (8) ID = 12.4 A. handbook, halfpage 10 0 24 VGS (V) RDSon ( Ω) 68 10 1 10−1 10−2 MDA794 (1)(2) (4)(5)(6)(7) (3) (8) |
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