1998 Mar 17

4

Philips Semiconductors

Product specification

7 N-channel 80 m

Ω FET array

enhancement mode MOS transistors

PHN708

Fig.2 Power derating curve.

handbook, halfpage

0

50

100

Ptot

(W)

Ts (°C)

200

2

0

1.6

150

1.2

0.8

0.4

MDA787

Fig.3 SOAR.

δ = 0.01; T

handbook, halfpage

MDA788

10

2

10

110

10

1

2

1

10

1

10

2

10

t p

T

P

t

t p

T

100 ms

1 ms

10 ms

DC

(1)

tp =

100

µs

VDS (V)

ID

(A)

THERMAL CHARACTERISTICS

Notes

1. When only one FET dissipates.

2. When either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power.

3. When FET four plus either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power.

4. When all seven FETs dissipate an equal amount of power.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per FET

thermal resistance from junction to soldering point

note 1

53

K/W

note 2

62

K/W

note 3

76

K/W

note 4

91

K/W