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FDN339 Datasheet(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # FDN339
Description  N-Channel 2.5 V (D-S) MOSFET
PDF  5 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN339 Datasheet(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN339 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN339 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN339 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN339 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN339 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
VGS = 2.0V
2.5V
4.0V
3.5V
4.5V
3.0V
0
4
8
12
16
20
00.511.522.5
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4.5V
3.0V
2.5V
2.0V
1.5V
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (
oC)
ID = 3A
VGS = 4.5V
0
0.02
0.04
0.06
0.08
0.1
12345
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 1.5A
TA = 125
oC
TA = 25
oC
0
4
8
12
16
20
0.5
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25
oC
125
oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VGS = 0V
Rev:2023A2
3
N-Channel 2.5 V (D-S) MOSFET
FDN339



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