Typical Characteristics (continued)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

R

(t) = r(t) * R

R

= 270 °C/W

Duty Cycle, D = t /t

1

2

θJA

θJA

θJA

T - T

= P * R

(t)

θJA

A

J

P(pk)

t1

t 2

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

0

200

400

600

800

1000

04

8

12

16

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

0

4

8

12

16

20

0.0001

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

RθJA=270

o

C/W

TA=25

o

C

0.01

0.1

1

10

100

0.1

1

10

100

VDS, DRAIN-SOURCE VOLTAGE (V)

VGS = 4.5V

SINGLE PULSE

RθJA = 270

oC/W

TA = 25

oC

DC

10s

100ms

10ms

1ms

1s

RDS(ON) LIMIT

0

1

2

3

4

5

0246

8

10

Qg, GATE CHARGE (nC)

ID = 3A

VDS = 5V

10V

15V

Rev:2023A2

4

N-Channel 2.5 V (D-S) MOSFET

FDN339