Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%

a) 250

°C/W when

mounted on a 0.02 in2

Pad of 2 oz. Cu.

b) 270

°C/W on a minimum

mounting pad of 2 oz. Cu.

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250

µA

20

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250

µA,Referenced to 25°C

14

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V, VGS = 0 V

1

µA

IGSSF

Gate-Body Leakage Current,

Forward

VGS = 8 V, VDS = 0 V

100

nA

IGSSR

Gate-Body Leakage Current,

Reverse

VGS = -8 V, VDS = 0 V

-100

nA

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250

µA

0.4

0.85

1.5

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA,Referenced to 25°C

-3

mV/

°C

RDS(on)

Static Drain-Source

On-Resistance

VGS = 4.5 V, ID = 3 A

VGS = 2.5 V, ID = 2.4 A

29

39

38

50

Ω

ID(on)

On-State Drain Current

VGS = 4.5 V, VDS = 5 V

10

A

gFS

Forward Transconductance

VDS = 5 V, ID = 3 A

11

S

Dynamic Characteristics

Ciss

Input Capacitance

700

pF

Coss

Output Capacitance

175

pF

Crss

Reverse Transfer Capacitance

VDS = 10 V, VGS = 0 V,

f = 1.0 MHz

85

pF

Switching Characteristics (Note 2)

td(on)

Turn-On Delay Time

8

16

ns

tr

Turn-On Rise Time

10

18

ns

td(off)

Turn-Off Delay Time

18

29

ns

tf

Turn-Off Fall Time

VDD = 10 V, ID = 1 A,

VGS = 4.5 V, RGEN = 6

Ω

5

10

ns

Qg

Total Gate Charge

7

10

nC

Qgs

Gate-Source Charge

1.2

nC

Qgd

Gate-Drain Charge

VDS = 10 V, ID = 3 A,

VGS = 4.5 V

1.9

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

0.42

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 0.42 A

(Note

2)

0.65

1.2

V

Rev:2023A2

2

m

N-Channel 2.5 V (D-S) MOSFET

FDN339