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FDN339 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN339 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page  General Description This N-Channel 2.5V specified MOSFET is has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Load switch Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1a) 3A - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W GS D N-Channel 2.5 V (D-S) MOSFET FDN339 SOT–23 1. GATE 2. SOURCE 3. DRAIN Rev:2023A2 1 Features VDS (V) = 20V RDS(ON) 38m (V GS = 4.5V) RDS(ON) 50m (V GS = 2.5V) |
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Similar Description - FDN339 |
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