FN8975 Rev.4.03

Page 6

Mar 28, 2024

ISL70023SEH, ISL73023SEH Datasheet

3.4

Electrical Specifications

Unless otherwise noted, VDS = 80V. Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total

ionizing dose of 100krad(Si) with exposure at a high dose rate of 50-300rad(Si)/s (ISL70023SEH only); or over a total ionizing

dose of 75krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.

Parameter

Symbol

Test Conditions

Min[1]

1. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, and +125°C, unless otherwise specified.

Typ[2]

2. Typical values shown are not guaranteed.

Max[1]

Unit

Static Characteristics

Drain-to-Source Breakdown

Voltage

BVDSS

VGS = 0V, ID = 1.2mA

100

--

V

Drain-to-Source Leakage

Current

IDSS

VDS = 80V, VGS = 0V

-

0.1

1.1

mA

Drain-to-Gate Leakage Current

IGSX

VDS = 80V, VGS = 0V

-

0.1

0.7

mA

Gate-to-Source Forward

Leakage

IGSS

VGS = 5V

-

1

9

mA

Gate-to-Source Reverse

Leakage

VGS = -4V

-0.7

-0.1

-

mA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 12mA

0.7

1.5

2.5

V

Drain-to-Source On-Resistance

rDS(ON)

VGS = 5V, ID = 25A

-

5

12

mΩ

Source-to-Drain Forward

Voltage

VSD

IS = 0.5A, VGS = 0V,

0.7

1.8

3.0

V

Dynamic Characteristics

Input Capacitance[3]

3. Limits are established by characterization and/or design, not tested.

CISS

VDS = 50V, VGS = 0V

-

1500

-

pF

Output Capacitance

COSS

VDS = 50V, VGS = 0V, TA=+25°C

-

960

1250

pF

Gate Resistance[3]

rG

TA = +25°C

-

5

-

mΩ

Reverse Transfer Capacitance[3]

CRSS

VDS = 50V, VGS = 0V

-

18

-

pF

Total Gate Charge

QG

VDS = 50V, ID = 25A, VGS = 5V,

TA = +25°C

-14

25

nC

Gate Charge at Threshold[3]

QG(th)

VDS = 50V, ID = 25A

-

2.6

-

nC

Gate-to-Drain Charge

QGD

VDS = 50V, ID = 25A, TA = +25°C

-

5.5

12

nC

Gate-to-Source Charge

QGS

VDS = 50V, ID = 25A, TA = +25°C

-

2.0

5

nC

Output Charge[3]

QOSS

VDS = 50V, VGS = 0V

-

71

-

nC