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ISL70023SEHL/PROTO Datasheet(PDF) 1 Page - Renesas Technology Corp |
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ISL70023SEHL/PROTO Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 14 page  Datasheet FN8975 Rev.4.03 Page 1 Mar 28, 2024 © 2017-2024 Renesas Electronics The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. The GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications. Applications ▪ Switching regulation ▪ Motor drives ▪ Relay drives ▪ Inrush protection ▪ Down hole drilling ▪ High reliability industrial Features ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate (0.01rad(Si)/s): 75krad(Si) ▪ ISL73023SEH radiation accepting testing • Low dose rate (0.01rad(Si)/s): 75krad(Si) ▪ Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package • Package area: 42mm2 ▪ Full military-temperature range operation •TA = -55°C to +125°C •TJ = -55°C to +150°C ▪ Qualified to Renesas Rad Hard GaN FET Screening and QCI Flow (R34TB0003EU) • All screening and QCI is in accordance with MIL-PRF-38535L Class-V Figure 1. ISL70023SEH 4 Ld SMD Package Figure 2. On-State Resistance (+25°C) 0 5 10 15 20 25 2.5 3.0 3.5 4.0 4.5 5.0 Gate-Source Voltage (V) ID = 0.5A ID = 6.0A ID = 12.0A ID = 18.0A ID = 24.0A ID = 30.0A ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor |
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