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ISL72028ASEHVF Datasheet(PDF) 20 Page - Renesas Technology Corp |
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ISL72028ASEHVF Datasheet(HTML) 20 Page - Renesas Technology Corp |
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20 / 25 page  FN8863 Rev.1.00 Page 20 of 25 Jul 27, 2017 ISL72028ASEH 5. Die Characteristics 5. Die Characteristics Table 4. Die and Assembly Related Information Die Information Dimensions 2413µm x 3322µm (95 mils x 130.79 mils) Thickness: 305µm ±25µm (12 mils ±1 mil) Interface Materials Glassivation Type: 12kÅ Silicon Nitride on 3kÅ Oxide Top Metallization Type: 300Å TiN on 2.8µm AlCu In Bondpads, TiN has been removed. Backside Finish Silicon Process P6SOI Assembly Information Substrate Potential Floating Additional Information Worst Case Current Density 1.6x105A/cm2 Transistor Count 4055 Weight of Packaged Device 0.31 grams Lid Characteristics Finish: Gold Potential: Grounded, tied to package pin 2 |
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