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EMC646SP16JS-10LL Datasheet(PDF) 34 Page - Emerging Memory & Logic Solutions Inc

Part # EMC646SP16JS-10LL
Description  4Mx16 bit CellularRAM
PDF  65 Pages
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC646SP16JS-10LL Datasheet(HTML) 34 Page - Emerging Memory & Logic Solutions Inc

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EMC646SP16J
4Mx16 CellularRAM
34
Preliminary
Table 16: Burst WRITE Cycle Timing Requirements
Note:
1. tAS required if tCSP > 20ns.
2. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the following two conditions: a) clocked CE#
HIGH, or b) CE# HIGH for longer than 15ns.
3. The High-Z timings measure a 100mV transition from either VOH or VOL toward VccQ/2.
Parameter
Symbol
104MHz
83MHz
66MHZ
Unit
Notes
Min
Max
Min
Max
Min
Max
Address and ADV# LOW setup time
tAS
00
0
ns
1
Address HOLD from ADV# HIGH(fixed latency)
tAVH
22
2
ns
CE# HIGH between subsequent burst or mixed mode
operations
tCBPH
56
8
ns
2
Maximum CE# pulse width
tCEM
44
4
µs
2
CE# LOW to WAIT valid
tCEW
17.5
1
7.517.5
ns
Clock period
tCLK
9.62
12.5
15
ns
CE# setup to CLK active edge
tCSP
34
5
ns
Hold time from active CLK edge
tHD
22
2
ns
Chip disable to WAIT High-Z output
tHZ
88
8
ns
3
CLK rise or fall time
tKHKL
1.6
1.8
2.0
ns
Clock to WAIT valid
tKHTL
79
11
ns
CLK HIGH or LOW time
tKP
34
5
ns
Setup time to activate CLK edge
tSP
33
3
ns



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