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EMC646SP16JS-90L Datasheet(PDF) 20 Page - Emerging Memory & Logic Solutions Inc |
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EMC646SP16JS-90L Datasheet(HTML) 20 Page - Emerging Memory & Logic Solutions Inc |
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20 / 65 page ![]() EMC646SP16J 4Mx16 CellularRAM 20 Preliminary Figure 13: Register READ, Synchronous Mode, Followed by READ ARRAY Operation (WE# HIGH) Note: 1. Non-default BCR settings for synchronous mode register READ followed by READ ARRAY operation: Latency code 2 (3 clocks); WAIT active LOW; WAIT asserted during delay. 2. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR. 3. CE# must remain LOW to complete a burst-of-one READ. WAIT must be monitored; additional WAIT cycles caused by refresh collisions require a corresponding number of additional CE# LOW cycles. CE# A[21:0] ADV# OE# DQ[15:0] A[19:18]2 CRE CLK WAIT tCBPH 3 Latch control register value Latch control register address tSP (except A[19:18]) tHZ tOHZ LB#/UB# tHD Data Valid tBOE tACLK tOLZ tSP tHD tHD tSP tHD tCSP tABA WE# tSP High-Z High-Z tCW tKOH Don’t Care Undefined CR Valid Address Address |
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