H8SLASH3021 datasheet(562/712 Pages) RENESAS

562 / 712 page

18. Electrical Characteristics

Rev.2.00 Mar. 22, 2007 Page 538 of 684

REJ09B0352-0200

Item

Symbol

Min

Typ

Max

Unit

Test

Conditions

Three-state

leakage current

(off state)

Ports 1, 2, 3,

5, 6, 8 to B

TSI|

—

1.0

µA

in = 0.5 V to

CC – 0.5 V

Input pull-up

MOS current

Ports 2 and 5

–I

—

300

µA

in = 0 V

Input

NMI,

RES

—

in = 0 V

capacitance

All input pins

except NMI and

RES

—

f = 1 MHz

a = 25°C

Current

dissipation*

2 *4

Normal

operation

CC*

—

f = 18 MHz

Sleep mode

—

f = 18 MHz

Standby

—

0.1

µA

a ≤ 50°C

mode*

—

50°C < T

Analog power

supply current

During A/D

conversion

—

1.7

2.8

Idle

—

0.2

µA

RAM standby voltage

RAM

2.0

—

Notes: 1. If the A/D converter is not used, do not leave the AV

CC and AVSS pins open.

Connect AV

CC to VCC, and connect AVSS to VSS.

2. Current dissipation values are for V

IH min = VCC – 0.5 V and VIL max = 0.5 V with all

output pins unloaded and the on-chip pull-up transistors in the off state.

3. The values are for V

RAM ≤ VCC < 3.6 V, VIH min = VCC × 0.9, and VIL max = 0.3 V.

4. ICC depends on VCC and f as follows:

CC max = 3.0 (mA) + 0.7 (mA/MHz ⋅ V) × VCC × f (normal operation)

CC max = 3.0 (mA) + 0.5 (mA/MHz ⋅ V) × VCC × f (sleep mode)

Power supply current value when programming/erasing in flash memory (T

a = 0°C to

+75°C) is 20 mA (max) higher than the power supply current value in normal operation.

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