H8SLASH3021 datasheet(571/712 Pages) RENESAS

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18. Electrical Characteristics

Rev.2.00 Mar. 22, 2007 Page 547 of 684

REJ09B0352-0200

18.2.5

Flash Memory Characteristics

Table 18.15 shows the flash memory characteristics.

Table 18.15 Flash Memory Characteristics

Conditions:

CC=3.0 V to 3.6 V, AVCC=3.6 V to 5.5 V, VSS=AVSS=0V

a = 0°C to +75°C (program/erase operating temperature range)

Item

Symbol

Min

Typ

Max

Unit

Comments

Programming time*

1,*2,*4

—

200

ms/

128

bytes

Erase time*

1,*3,*5

—

100

1200

ms/

block

Reprogramming count

WEC

—

100

Times

Programming

Wait time after SWE bit setting*

sswe

—

μs

Wait time after PSU bit setting*

spsu

—

μs

Wait time after P bit setting (initial)

sp30

μs

Wait time after P bit setting (initial)

sp200

198

200

202

μs

Wait time after P bit setting

(additional programming)

sp10

μs

Wait time after P bit clear*

—

μs

Wait time after PSU bit clear*

cpsu

—

μs

Wait time after PV bit setting*

spv

—

μs

Wait time after H'FF dummy write*

spvr

—

μs

Wait time after PV bit clear*

cpv

—

μs

Wait time after SWE bit clear*

hvcswe

100

—

μs

Maximum programming count*

1,*4

—

1000

Times

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