H8SLASH3028F datasheet(604/923 Pages) RENESAS

604 / 923 page

Rev. 2.00, 09/03, page 574 of 890

18.2

Flash Memory Version Features

The H8/3028F-ZTAT has 384 kbytes of on-chip flash memory.

The features of the flash memory are summarized below.

• Four flash memory operating modes

 Program mode

 Erase mode

 Program-verify mode

 Erase-verify mode

• Programming/erase methods

The flash memory is programmed 128 bytes at a time. Erasing is performed in block units. To

erase the entire flash memory, each block must be erased in turn. In block erasing, 4-kbyte, 32-

kbyte, and 64-kbyte blocks can be set arbitrarily.

• Programming/erase times

The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,

equivalent approximately to 80 µs (typ.) per byte, and the erase time is 100 ms (typ.) per block.

• Reprogramming capability

The flash memory can be reprogrammed up to 100 times.

• On-board programming modes

There are two modes in which flash memory can be programmed/erased/verified on-board:

 Boot mode

 User program mode

• Automatic bit rate adjustment

For data transfer in boot mode, the H8/3028F-ZTAT chip’s bit rate can be automatically

adjusted to match the transfer bit rate of the host.

• Flash memory emulation in RAM

Flash memory programming can be emulated in real time by overlapping a part of RAM onto

flash memory.

• Protect modes

There are three protect modes—hardware, software, and error—which allow protected status

to be designated for flash memory program/erase/verify operations

• PROM mode

Flash memory can be programmed/erased in PROM mode, using a PROM programmer, as

well as in on-board programming mode.

H8/3028F Datasheet(PDF) 604 Page - Renesas Technology Corp