H8SLASH3028F datasheet(608/923 Pages) RENESAS

608 / 923 page

Rev. 2.00, 09/03, page 578 of 890

Bit 6—Software Write Enable (SWE): Enables or disables flash memory programming and

erasing. (This bit should be set when setting bits 5 to 0, EBR1 bits 7 to 0, and EBR2 bits 3 to 0.)

Bit 6

SWE

Description

Programming/erasing disabled

(Initial value)

Programming/erasing enabled

[Setting condition]

When FWE = 1

Note: Do not execute a SLEEP instruction while the SWE bit is set to 1.

Bit 5—Erase Setup (ESU): Prepares for a transition to erase mode. Set this bit to 1 before setting

the E bit to 1 in FLMCR1 (do not set the SWE, PSU, EV, PV, E, or P bit at the same time).

Bit 5

ESU

Description

Erase setup cleared

(Initial value)

Erase setup

[Setting condition]

When FWE = 1 and SWE = 1

Bit 4—Program Setup (PSU): Prepares for a transition to program mode. Set this bit to 1 before

setting the P bit to 1 in FLMCR1 (do not set the SWE, ESU, EV, PV, E, or P bit at the same time).

Bit 4

PSU

Description

Program setup cleared

(Initial value)

Program setup

[Setting condition]

When FWE = 1 and SWE = 1

Bit 3—Erase-Verify Mode (EV): Selects erase-verify mode transition or clearing. (Do not set the

SWE, ESU, PSU, PV, E, or P bit at the same time.)

Bit 3

Description

Erase-verify mode cleared

(Initial value)

Transition to erase-verify mode

[Setting condition]

When FWE = 1 and SWE = 1

H8/3028F Datasheet(PDF) 608 Page - Renesas Technology Corp