H8SLASH3028F datasheet(703/923 Pages) RENESAS

703 / 923 page

Rev. 2.00, 09/03, page 673 of 890

Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or

erase/erase-verify flowchart.

2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash

memory control register (FLMCR1) is set. It does not include the programming

verification time.)

3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does

not include the erase verification time.)

4. To specify the maximum programming time (tP(max)) in the 128-byte programming

flowchart, set the maximum value (1000) for the maximum programming count (N).

The wait time after P bit setting should be changed as follows according to the value of

the programming counter (n).

Programming counter (n) = 1 to 6:

tsp30 = 30 µs

Programming counter (n) = 7 to 1000:

tsp200 = 200 µs

Programming counter (n) [in additional programming] = 1 to 6: tsp10 = 10 µs

5. For the maximum erase time (tE(max)), the following relationship applies between the

wait time after E bit setting (tse) and the maximum erase count (N):

tE(max) = Wait time after E bit setting (tse)

× maximum erase count (N)

To set the maximum erase time, the values of tse and N should be set so as to satisfy

the above formula.

Examples: When tse = 100 [ms], N = 12 times

When tse = 10 [ms], N = 120 times

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