 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
STM8S105C4B3CTR Datasheet(PDF) 81 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM8S105C4B3CTR Datasheet(HTML) 81 Page - STMicroelectronics |
|
|
81 / 127 page  Figure 23: Typical LSI accuracy vs VDD @ 4 temperatures Memory characteristics 10.3.5 RAM and hardware registers Table 36: RAM and hardware registers Unit Min Conditions Parameter Symbol V VIT-max (2) Halt mode (or reset) Data retention mode (1) VRM (1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design, not tested in production. refer to Operating conditions for the value of VIT-max (2)Refer to the Operating conditions section for the value of V IT-max Flash program memory/data EEPROM memory General conditions: TA = -40 to 125°C. Table 37: Flash program memory/data EEPROM memory Unit Max Typ Min (1) Conditions Parameter Symbol V 5.5 2.95 fCPU ≤ 16 MHz Operating voltage (all modes, execution/write/erase) VDD ms 6.6 6 Standard programming time (including erase) for tprog byte/word/block (1 byte/4 bytes/128 bytes) 81/127 DocID14771 Rev 9 Electrical characteristics STM8S105xx |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
