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ST10F276Z5 Datasheet(PDF) 204 Page - STMicroelectronics |
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ST10F276Z5 Datasheet(HTML) 204 Page - STMicroelectronics |
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204 / 239 page ![]() Electrical characteristics ST10F276Z5 204/239 Figure 54. Crystal oscillator and resonator connection diagram The given values of CA do not include the stray capacitance of the package and of the printed circuit board: The negative resistance values are calculated assuming additional 5 pF to the values in the table. The crystal shunt capacitance (C0), the package and the stray capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4 pF. The external resistance between XTAL1 and XTAL2 is not necessary, since already present on the silicon. 23.8.14 32 kHz Oscillator specifications Conditions: VDD = 5 V ±10%, TA = –40 / +125 °C Table 101. Negative resistance (absolute min. value @125oC / VDD = 4.5 V) CA (pF) 12 15 18 22 27 33 39 47 4 MHz 460 Ω 550 Ω 675 Ω 800 Ω 840 Ω 1000 Ω 1180 Ω 1200 Ω 8 MHz 380 Ω 460 Ω 540 Ω 640 Ω 580 Ω -- - 12 MHz 370 Ω 420 Ω 360 Ω -- -- - CA CA Crystal Resonator ST10F276Z5 ST10F276Z5 Table 102. 32 kHz Oscillator specifications Symbol Parameter Conditions Value Unit Min. Typ. Max. gm32 Oscillator (1) 1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started, the current biasing is reduced to lower the power consumption of the system. Start-up 20 31 50 µA/V Normal run 8 17 30 VOSC32 Oscillation amplitude (2)) 2. Not 100% tested, guaranteed by design characterization. Peak to peak 0.5 1.0 2.4 V VAV32 Oscillation voltage level (2) Sine wave middle 0.7 0.9 1.2 tSTUP32 Oscillator start-up time(2) Stable VDD –15 s |
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