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IS61WV6416DBLL/DBLS Datasheet(PDF) 9 Page - Integrated Silicon Solution, Inc

Part # IS61WV6416DBLL/DBLS
Description  64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
PDF  21 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV6416DBLL/DBLS Datasheet(HTML) 9 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
9
Rev. A
11/18/2010
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IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS,
IS64WV6416DBLL/DBLS
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
-8
-10
-12
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
trc
ReadCycleTime
8
—
10
—
12
—
ns
tAA
AddressAccessTime
—
8
—
10
—
12
ns
toHA
OutputHoldTime
2.0
—
2.0
—
3
—
ns
tAce
CE
AccessTime
—
8
—
10
—
12
ns
tdoe
OE
AccessTime
—
5.5
—
6.5
—
6.5
ns
tHzoe(2)
OE
toHigh-ZOutput
—
3
—
4
—
6
ns
tLzoe(2)
OE
toLow-ZOutput
0
—
0
—
0
—
ns
tHzce(2
CE
toHigh-ZOutput
0
3
0
4
0
6
ns
tLzce(2)
CE
toLow-ZOutput
3
—
3
—
3
—
ns
tbA
LB
,UBAccessTime
—
5.5
—
6.5
—
6.5
ns
tHzb(2)
LB
,UBtoHigh-ZOutput
0
5.5
0
6.5
0
6.5
ns
tLzb(2)
LB
,UBtoLow-ZOutput
0
—
0
—
0
—
ns
tPu
PowerUpTime
0
—
0
—
0
—
ns
tPd
PowerDownTime
—
8
—
10
—
10
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V
andoutputloadingspecifiedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.



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