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IS61WV6416DBLL/DBLS Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

Part # IS61WV6416DBLL/DBLS
Description  64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
PDF  21 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV6416DBLL/DBLS Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
11/18/2010
IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS,
IS64WV6416DBLL/DBLS
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
-20 ns
-25 ns
-35 ns
-45 ns
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min.
Max.
Unit
trc
ReadCycleTime
20—
25—
35—
45—
ns
tAA
AddressAccessTime
—20
—25
—35
—45
ns
toHA
OutputHoldTime
2.5—
6—
8—
10—
ns
tAce
CE
AccessTime
—20
—25
—35
—45
ns
tdoe
OE
AccessTime
—8
—12
—15
—20
ns
tHzoe(2)
OE
toHigh-ZOutput
08
08
010
0
15
ns
tLzoe(2)
OE
toLow-ZOutput
0—
0—
0—
0
—
ns
tHzce(2
CE
toHigh-ZOutput
08
08
010
0
15
ns
tLzce(2)
CE
toLow-ZOutput
3—
10—
10—
10—
ns
tbA
LB
,UBAccessTime
—8
—25
—35
—45
ns
tHzb
LB
,UBtoHigh-ZOutput
08
08
010
0
15
ns
tLzb
LB
,UBtoLow-ZOutput
0—
0—
0—
0
—
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0.4Vto
Vdd-0.3VandoutputloadingspecifiedinFigure1a.
2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. Not100%tested.



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