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IS61WV6416DBLL/DBLS Datasheet(PDF) 16 Page - Integrated Silicon Solution, Inc

Part # IS61WV6416DBLL/DBLS
Description  64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
PDF  21 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV6416DBLL/DBLS Datasheet(HTML) 16 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
11/18/2010
IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS,
IS64WV6416DBLL/DBLS
DATA RETENTION WAVEFORM (CEControlled)
HIGH SPEED (IS61WV6416DALL/DBLL)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
Symbol
Parameter
Test Condition
Options
Min.
Typ.(1)
Max.
Unit
Vdr
VddforDataRetention
SeeDataRetentionWaveform
2.0
—
3.6
V
Idr
DataRetentionCurrent
Vdd=2.0V,CE≥Vdd–0.2V
Com.
—
4
40
µA
Ind.
—
—
55
Auto.
90
tsdr
DataRetentionSetupTime SeeDataRetentionWaveform
0
—
—
ns
trdr
RecoveryTime
SeeDataRetentionWaveform
trc
—
—
ns
Note 1:TypicalvaluesaremeasuredatVdd=3.0V,TA = 25oc andnot100%tested.
VDD
CE
≥ VDD - 0.2V
tSDR
tRDR
VDR
CE
GND
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol
Parameter
Test Condition
Options
Min.
Typ.(1)
Max.
Unit
Vdr
VddforDataRetention
SeeDataRetentionWaveform
1.2
—
3.6
V
Idr
DataRetentionCurrent
Vdd=1.2V,CE≥Vdd–0.2V
Com.
—
4
40
µA
Ind.
—
—
55
Auto.
—
—
90
tsdr
DataRetentionSetupTime SeeDataRetentionWaveform
0
—
—
ns
trdr
RecoveryTime
SeeDataRetentionWaveform
trc
—
—
ns
Note 1:TypicalvaluesaremeasuredatVdd=1.8V,TA = 25oc andnot100%tested.



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