M24C32-R datasheet(24/42 Pages) STMICROELECTRONICS

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DC and AC parameters

M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF

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Figure 11. AC measurement I/O waveform

Table 10. Input parameters

Symbol

Parameter(1)

1. Characterized only, not tested in production.

Test condition

Min.

Max.

Unit

CIN

Input capacitance (SDA)

CIN

Input capacitance (other pins)

Input impedance (E2, E1, E0, WC)(2)

2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).

VIN < 0.3 VCC

VIN > 0.7 VCC

500

Table 11. AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

Cbus

Load capacitance

100

SCL input rise/fall time, SDA input fall time

Input levels

0.2 VCC to 0.8 VCC

Input and output timing reference levels

0.3 VCC to 0.7 VCC

Table 12. Cycling performance

Symbol

Parameter

Test condition

Max.

Unit

Ncycle

Write cycle

endurance(1)

1. The Write cycle endurance is defined by characterization and qualification. For devices embedding the

ECC functionality (see Chapter 5.1.5), the write cycle endurance is defined for group of four bytes located

at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer.

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

4,000,000(2)

2. Cycling performance for products identified by process letter K or T (previous products were specified with

1 million cycles at 25 °C).

Write cycle(3)

3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock

Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write

Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling

TA = 85 °C, VCC(min) < VCC < VCC(max)

1,200,000

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