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AN3142 Datasheet(PDF) 19 Page - STMicroelectronics

Part # AN3142
Description  Solution for designing a 400 W fixed-off-time controlled
PDF  44 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3142 Datasheet(HTML) 19 Page - STMicroelectronics

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AN3142
Designing a fixed-off-time PFC
Doc ID 17005 Rev 3
19/44
Figure 10.
Conduction losses and total losses in the STP12NM50FP MOSFET
couples for the 400W FOT PFC
Figure 10 shows the trend of the total losses (Equation 35) on the line voltage for the two
selected STP12NM50 MOSFETs.
4.3.6
Boost diode selection
Following a similar criterion as that for the MOSFET, the output rectifier can also be
selected. A minimum breakdown voltage of 1.2·Vout
(4) and a current rating higher than
3·Iout (
Equation 8) can be chosen for a rough initial selection of the rectifier. The correct
choice is then confirmed by the thermal calculation. If the diode junction temperature works
within 125°C the device has been selected correctly, otherwise a bigger device must be
selected. The switching losses can be significantly reduced if an ultra-fast diode is
employed. Since this circuit operates in the continuous current mode, the MOSFET must
recover the boost diode minority carrier charge at turn-on. Thus, a diode with a small
reverse recovery time (trr) must be used.
In this 400 W application an STTH8R06, (600 V, 8 A) has been selected. The STTH8R06
offers the best solution for the continuous current mode operation due to its very fast reverse
recovery time, 25 ns typical. This part has a breakdown voltage rating (Vrrm) of 600 V,
average forward current rating (Ifave) of 8 A and reverse recovery time (trr) of 25 ns. The
rectifier AVG (
Equation 8) and RMS (Equation 17) current values and the parameter V
th
(rectifier threshold voltage) and Rd (dynamic resistance) given in the datasheet allow the
calculation of the rectifier losses.
From the STTH8R06 datasheet, Vth is 1.16 V, Rd is 0.08, neglecting the recovery losses:
Equation 37
From
(13) and Equation 37 the maximum thermal resistance to keep the junction
temperature below 125°C is then:
Equation 38
MOSFETS total losses
0
5
10
15
20
25
85
110
135
160
185
210
235
260
285
Vi n_ac [Vr ms]
Plosses(Vi)
Range Limi ts
rms
2
d
out
th
diode
ID
R
I
V
P
⋅
+
⋅
=
()
W
69
.
1
A
56
.
2
08
.
0
A
0
.
1
V
16
.
1
P
2
diode
=
⋅
Ω
+
⋅
=
diode
ambx
th
P
T
C
125
R
−
°
=
W
C
45
.
44
W
69
.
1
C
50
C
125
R
th
°
=
°
−
°
=



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