DocID027438 Rev 1

9/13

AN4653

Data retention

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2

Data retention

This section intends to offer all details concerning the data retention capabilities of the high

density EEPROM based on CMOS F8H process, industrial range 6 (temperature range

-40°C to +85°C).

Data retention definition:

(the EEPROM devices being DC supplied or not).

2.1

Data retention values specified in high density devices

datasheets

2.2

CMOS F8H process data retention performances

2.2.1

Data retention and temperature dependence

The CMOS F8H process EEPROM data retention is temperature dependent and is

independent of the value of Vcc: the higher is the temperature, the lower is the data

retention time.

The data retention safe values are:

•

more than 200 years (at 55°C or less);

•

more than 50 years (at 85°C).

Table 4. Data retention for CMOS F8H process high density devices

Product

Data retention

M24256-BF, M24256-BR, M24256-BW, M24256-DF, M24256-DR

M95256-DF, M95256-R, M95256-W

M24512-DF, M24512-R, M24512-W

M95512-DF, M95512-R, M95512-W

M24M01-DF, M24M01-R

M95M01-DF, M95M01-R

M24M02-DR

M95M02-DR

more than 200 years at 55°C