DocID027438 Rev 1

5/13

AN4653

Cycling endurance

12

1

Cycling endurance

This section intends to offer all details concerning the cycling capabilities of the high density

EEPROMs based on CMOS F8H process, industrial range 6 (temperature range -40°C to

+85°C).

1.1

Cycling values specified in high density EEPROM datasheets

1.2

CMOS F8H process high density EEPROM cycling

performances

1.2.1

Cycling and temperature dependence

Glossary:

–

Cycle = Internal write cycle executed inside the EEPROM.

–

Cycling = cumulated number of write cycles

As specified in the related datasheets, the cycling endurance depends on the operating

temperature (and is independent of the value of the supply voltage): the higher the

temperature, the lower the cycling performance

.

This safe cycling operating area can be represented by the following equation and/or by

Figure 1.

Number of cycles

4 Million∗e

k∗ t

° 25

–

()

–

()

=

Where:

–

k = 0.018971

Table 2. CMOS F8H process devices (-40°C to +85°C)

Product

Number of cycles for each cell

M24256-BF, M24256-BR, M24256-BW, M24256-DF, M24256-DR

M95256-DF, M95256-R, M95256-W

M24512-DF, M24512-R, M24512-W

M95512-DF, M95512-R, M95512-W

M24M01-DF, M24M01-R

M95M01-DF, M95M01-R

M24M02-DR

M95M02-DR

4 million cycles (at 25°C)

1.2 million cycles (at 85°C)