BSN011NE2LSI datasheet(3/9 Pages) INFINEON

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BSN011NE2LSI

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

3500

4700

Output capacitance

C oss

1500

2000

Reverse transfer capacitance

Crss

150

Turn-on delay time

t d(on)

3.8

Rise time

t r

5.4

Turn-off delay time

t d(off)

Fall time

t f

4.0

Gate Charge Characteristics

Gate to source charge

Q gs

8.5

Gate charge at threshold

Q g(th)

5.6

Gate to drain charge

Q gd

5.8

8.7

Switching charge

Q sw

8.7

Gate charge total

Q g

Gate plateau voltage

V plateau

2.4

Gate charge total

Q g

V DD=12 V, I D=30 A,

V GS=0 to 10 V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

Output charge

Q oss

V DD=12 V, V GS=0 V

Reverse Diode

Diode continuous forward current

I S

Diode pulse current

I S,pulse

200

Diode forward voltage

V SD

V GS=0 V, I F=12 A,

T j=25 °C

0.58

Reverse recovery charge

Q rr

V R=15 V, I F=12 A,

di F/dt =400 A/µs

5) See figure 16 for gate charge parameter definition

4) See figure 13 for more detailed information

T C=25 °C

Values

V GS=0 V, V DS=12 V,

f =1 MHz

V DD=12 V, V GS=10 V,

I D=30 A, R G,ext=1.6 W

V DD=12 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 2.0

page 3

2014-05-23

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