BSN011NE2LSI datasheet(1/9 Pages) INFINEON

Part #	BSN011NE2LSI

Description	Optimized for high performance Buck converter

PDF	9 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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BSN011NE2LSI

OptiMOSTM Power-MOSFET

Features

• Optimized for high performance Buck converter

• Monolithic integrated Schottky like diode

• Very low on-resistance R

DS(on) @ V GS=4.5 V

• 100% avalanche tested

• N-channel

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

50

A

V GS=10 V, T C=100 °C

50

V GS=4.5 V, T C=25 °C

50

V GS=4.5 V,

T C=100 °C

50

V GS=10 V, T A=25 °C,

R thJA=50 K/W

2)

37

Pulsed drain current

3)

I D,pulse

T C=25 °C

200

Avalanche current, single pulse

4)

I AS

T C=25 °C

50

Avalanche energy, single pulse

E AS

I D=50 A, R GS=25 W

145

mJ

Gate source voltage

V GS

±20

V

Value

1) J-STD20 and JESD22

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Type

Package

Marking

BSN011NE2LSI

LG-USON-6-1

011NE2I

A

49

nC

V

DS

25

V

R

DS(on),max

1.1

m

W

I

D

50

Q

OSS

32

nC

Q

G(0V..10V)

Product Summary

LG-USON-6-1

Rev. 2.0

page 1

2014-05-23

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