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BSN011NE2LSI Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSN011NE2LSI Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 9 page ![]() BSN011NE2LSI 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 0 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 180 T j [°C] 10 mA 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 101 102 103 104 0 5 10 15 20 25 V DS [V] -55 °C 25 °C 125 °C 150 °C 10-1 100 101 102 103 0 0.4 0.8 1.2 V SD [V] Rev. 2.0 page 6 2014-05-23 |
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