DMN2010UDZ

Document number: DS37730 Rev. 3 - 2

1 of 7

www.diodes.com

May 2015

© Diodes Incorporated

DMN2010UDZ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

24V

7m

11.0A

7.8m

10.8A

8.2m

10.6A

9.5m

10.5A

10.5m

10.0A

Description

This new generation MOSFET is designed to minimize the on-state

making it ideal for high-efficiency power management applications.

Applications



Power Management Functions



Battery Pack



Load Switch

Features



Low On-Resistance



Low Gate Threshold Voltage



Low Input Capacitance



Fast Switching Speed



ESD Protected Gate > 2KV



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and

Antimony Free. “Green” Device (Note 3)

Mechanical Data



Case: U-DFN2535-6



Case Material:

Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020



Terminal Connections: See Diagram Below



Weight: 0.012 grams (Approximate)

Part Number

Case

Packaging

DMN2010UDZ-7

U-DFN2535-6

3,000 / Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green

and Lead-free.

3. Halogen- and Antimony-

free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

U-DFN2535-6

R11 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 15 for 2015)

WW = Week Code (01 to 53)

R11

ESD PROTECTED

Bottom View

U-DFN2535-6

D

Equivalent Circuit

D

S1

G1

Gate Protection

Diode

D

S2

G2

2

Gate Protection

Diode