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DMN2010UDZ Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN2010UDZ
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2010UDZ Datasheet(HTML) 3 Page - Diodes Incorporated

  DMN2010UDZ Datasheet HTML 1Page - Diodes Incorporated DMN2010UDZ Datasheet HTML 2Page - Diodes Incorporated DMN2010UDZ Datasheet HTML 3Page - Diodes Incorporated DMN2010UDZ Datasheet HTML 4Page - Diodes Incorporated DMN2010UDZ Datasheet HTML 5Page - Diodes Incorporated DMN2010UDZ Datasheet HTML 6Page - Diodes Incorporated DMN2010UDZ Datasheet HTML 7Page - Diodes Incorporated  
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DMN2010UDZ
Document number: DS37730 Rev. 3 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN2010UDZ
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
1
2
3
4
5
6
7
8
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D=5.5A
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0
2
4
6
8
10
12
14
16
18
20
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS=2.5V
V
GS=3.1V
V
GS=4.5V
V
GS=4.0V
0
0.002
0.004
0.006
0.008
0.01
0.012
0
5
10
15
20
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS= 4.5V
-55
℃
25
℃
85
℃
125
℃
150
℃
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS=2.5V, ID=5.5A
V
GS=4.5V, ID=10A
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS=1.0V
V
GS=0.9V
V
GS=1.2V
V
GS=1.5V
V
GS=2.5V
V
GS=3.1V
V
GS=4.5V
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS= 5V
-55
℃
25
℃
85
℃
150
℃
125
℃



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