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DMN2010UDZ Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN2010UDZ
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2010UDZ Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN2010UDZ
Document number: DS37730 Rev. 3 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN2010UDZ
0
0.005
0.01
0.015
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=2.5V, ID=5.5A
V
GS=4.5V, ID=10A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
I
D=1mA
I
D=250μA
1
10
100
1000
10000
100000
1000000
0
2
4
6
8
10 12 14 16 18 20 22 24
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
150
℃
125
℃
85
℃
25
℃
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V, TA=-55℃
V
GS=0V, TA=25℃
V
GS=0V, TA=85℃
V
GS=0V, TA=125℃
V
GS=0V, TA=150℃
0
2
4
6
8
0
10
20
30
40
50
60
Qg - TOTAL GATE CHARGE (nC)
f=1MHz
Figure 12. Gate Charge
V
DS=10V, ID=5.5A
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss



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